ACE1522B p - channel enhancement mode field effect transistor ver 1. 2 1 d escription line current interrupter in telephone sets relay high speed and line transformer drivers. features ? v ds (v)= - 50v, id= - 0.13a ? r ds(on) 10@v gs = - 5v ? voltage controlled p - channel small signal switch ? high density cell design for low r ds(on) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 5 0 v gate - source voltage v gs 20 v drain current (continuous) i d - 0.13 a drain current (pulse) i d - 0.52 power dissipation (1) p d 0.35 w operating and storage temperature range t j , t s tg - 55 to 150 o c packaging type sot - 23 - 3 ordering i n formation ACE1522B xx + h bm : sot - 23 - 3 pb - free halogen - free
ACE1522B p - channel enhancement mode field effect tran sistor ver 1.2 2 electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit on/ off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 5 0 v zero gate volt age drain current i dss v ds = - 50v, v gs =0v - 15 ua v ds = - 50v, v gs =0v, t j =125 - 60 gate leakage current i gss v gs = 20 v, v ds =0v 10 na on characteristics b static drain - source on - resistance r ds(on) v gs = - 5 v, i d = - 0.1 a 10 gate threshold voltage v gs(th) v ds =v gs , i d = - 1m a - 0.8 - 1.75 - 2 v forward transconductance g fs v ds = - 25 v, i d = - 0.1 a 0.05 0.6 s switching characteristics b total gate charge q g v ds = - 2 5 v, i d = - 0 . 1 a v gs = - 5v 0 . 9 1 . 3 nc gate - source charge q gs 0 . 2 gate - drain charge q gd 0 . 3 turn - on delay time t d(on) v dd = - 3 0v, i d = - 0.27 a, v g s = - 1 0 v r g en = 6 2.5 5 ns turn - on rise time t f 6.3 13 turn - off delay time t d(off) 10 20 turn - off fall time t f 4.8 9.6 dynamic characteristics input capacitance c iss v ds = - 10 v, v gs =0v f= 200k hz 33 pf output capacitance c oss 38 reverse transfer capacitance c rss 36 gate resistance r g v gs = - 15mv, f=1.0mhz 9 drain - source diode characteristics and maximum ratings b drain - source diode forward voltage v sd v gs =0v, i s = - 0.26a (2) - 0.8 - 1.2 v note: 1. r ja is the sum of the junction - to - case and case - to - ambient thermal resistanc e where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width 300 s, duty cycle 2.0%
ACE1522B p - channel enhancement mode field effect tran sistor ver 1.2 3 typical performance characteristics
ACE1522B p - channel enhancement mode field effect tran sistor ver 1.2 4 typical performance characteristics
ACE1522B p - channel enhancement mode field effect tran sistor ver 1.2 5 packing information so t - 23 - 3 unit: mm
ACE1522B p - channel enhancement mode field effect tran sistor ver 1.2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety o r effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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